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MITSUBISHI TRANSISTOR MODULES
QM50E2Y/E3Y-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM50E2Y/E3Y-H
* * * * *
IC Collector current .......................... 50A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION DC chopper, DC motor controllers, Inverters
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
94 (7) 20
10.5 13 10.5
(E2Y) (7) 20 27 6.5 E1 D2 D1 A1 C1
80
34
E1 B1
12 B1 M5 Tab#110, t=0.5
6.5
E1 (E3Y) D2 D1 C1 E1 K1
31
LABEL
(8)
22.5
E1
B1
MITSUBISHI TRANSISTOR MODULES
QM50E2Y/E3Y-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current)
(Transistor part including D1, Tj=25C)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 50 50 310 3 500 Unit V V V V A A W A A
ABSOLUTE MAXIMUM RATINGS
Symbol VRRM VRSM VR (DC) IDC IFSM I2t Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage DC current Surge (non-repetitive) forward current I2t for fusing
(Diode part (D2), Tj=25C)
Conditions Ratings 600 720 480 DC circuit, resistive, inductive load Peak value of one cycle of 60Hz (half wave) Value for one cycle of surge current 50 1000 4.2 x 103 Unit V V V A A A2s
ABSOLUTE MAXIMUM RATINGS
Symbol Tj Tstg Viso Parameter Junction temperature Storage temperature Isolation voltage
(Common)
Conditions Ratings -40~150 -40~125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.96~2.94 20~30 210 Unit C C V N*m kg*cm N*m kg*cm g
--
Mounting torque Mounting screw M6
--
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Transistor part including D1, Tj=25C)
Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=50A, IB=0.65A -IC=50A (diode forward voltage) IC=50A, VCE=2V/5V Min. -- -- -- -- -- -- 75/100 -- VCC=300V, IC=50A, IB1=-IB2=1A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 200 2.0 2.5 1.75 -- 1.5 12 3.0 0.4 1.3 0.15 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM50E2Y/E3Y-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS
Symbol IRRM VFM trr Qrr Rth (j-c) Rth (c-f) Parameter Repetitive peak reverse current Forward voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance
(Diode part (D2), Tj=25C)
Test conditions VR=VRRM, Tj=150C IF=50A IF=50A, di/dt=-100A/s, VR=300V, Tj=150C Junction to case Conductive grease applied (case to fin) Limits Min. -- -- -- -- -- -- Typ. -- -- -- -- -- -- Max. 5.0 1.5 0.9 20 0.65 0.15 Unit mA V s C C/ W C/ W
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL)
100 Tj=25C IB=1A IB=0.65A IB=0.3A 60 IB=0.2A IB=0.1A 40 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 10 0
DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
VCE=5.0V
COLLECTOR CURRENT IC (A)
80
DC CURRENT GAIN hFE
VCE=2.0V
20
0
Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VCE (V)
COLLECTOR CURRENT IC (A)
VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL)
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 1.2 1.6 2.0 2.4 2.8 3.2
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
10 3 7 5 4 3 2 10 2 7 5 4 3 2
BASE CURRENT IB (A)
VCE=2.0V Tj=25C
VBE(sat)
SATURATION VOLTAGE
VCE(sat) IB=0.65A Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2
10 1 10 0
BASE-EMITTER VOLTAGE
VBE (V)
COLLECTOR CURRENT IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM50E2Y/E3Y-H
HIGH POWER SWITCHING USE
INSULATED TYPE
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 5 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) ton, ts, tf (s) Tj=25C Tj=125C 4 2
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
3
SWITCHING TIME
10 1 7 5 4 3 VCC=300V IB1=-IB2=1A 2 10 0 7 5 4 3 2 10 0
ts
2
ton tf
1 IC=20A 0 10 -2 2 3 4 5 7 10 -1 IC=30A IC=50A 2 3 4 5 7 10 0
Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 IC (A)
BASE CURRENT IB (A)
COLLECTOR CURRENT
SWITCHING TIME VS. BASE CURRENT (TYPICAL) 3 2 ts, tf (s) ts 10 1 7 VCC=300V 5 IB1=1A 4 IC=50A 3 2 tf 10 0 7 5 4 3 10 -1 Tj=25C Tj=125C 2 3 4 5 7 10 0 2 3 4 5 7 10 1 COLLECTOR CURRENT IC (A)
REVERSE BIAS SAFE OPERATING AREA 160 Tj=125C 140 120 100 80 60 40 20 0 0 200 400 600 800 VCE (V) IB2=-1A -3A -5A
SWITCHING TIME
BASE REVERSE CURRENT -IB2 (A)
COLLECTOR-EMITTER VOLTAGE
FORWARD BIAS SAFE OPERATING AREA 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 TC=25C NON-REPETITIVE 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE VCE (V)
DERATING FACTOR OF F. B. S. O. A. 100 90 DERATING FACTOR (%) 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 TC (C) COLLECTOR DISSIPATION
10
COLLECTOR CURRENT IC (A)
m
s
50 10 0 0 ss
SECOND BREAKDOWN AREA
1m s
D C
CASE TEMPERATURE
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM50E2Y/E3Y-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 710 1 2 3 4 5 0.5
0.4
Zth (j-c) (C/W)
0.3
0.2
0.1 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0
TIME (s)
PERFORMANCE CURVES (Diode part (D1))
FORWARD CHARACTERISTICS (TYPICAL)
10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 0.4 0.8 1.2 1.6
MAXIMUM SURGE CURRENT IFSM (A) SURGE FORWARD CURRENT
500
FORWARD CURRENT IF (A)
400
300
200
100
Tj=25C Tj=125C 2.0 2.4
0 10 0
2 3 4 5 7 10 1
2 3 4 5 7 10 2
FORWARD VOLTAGE
VF (A)
CONDUCTION TIME (CYCLES AT 60Hz) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC 10 0 2 3 4 5 710 1 2 3 4 5 7 2.0
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
10 2 7 5 3 2 10 2 Tj=25C Tj=125C VCC=300V IB1=-IB2=1A Irr
1.6
Irr (A), Qrr (c)
7 5 3 2
Zth (j-c) (C/W)
10 1
10 1
trr (s)
1.2
0.8
10 0 10 0 Qrr 7 5 3 trr 2 10 -1 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
0.4 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0
FORWARD CURRENT
IF (A)
TIME (s)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM50E2Y/E3Y-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES (Diode part (D2))
MAXIMUM FORWARD CHARACTERISTIC 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.6 1.0 1.4 1.8 2.2 VF (V) FORWARD VOLTAGE TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC 10 0 2 3 4 5 710 1 2 3 4 5 7 1.0
Tj=25C 0.8 Zth (j-c) (C/W)
FORWARD CURRENT IF (A)
0.6
0.4
0.2 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s)
MAXIMUM SURGE CURRENT IFSM (A) 1000
REVERSE RECOVERY CHARACTERISTICS (VS. IF) (TYPICAL) 10 2 7 VR=300V 5 di/dt=-100A/s 3 Irr 2 Irr (A), Qrr (C) 10 1 7 5 3 2 10 2
800
SURGE FORWARD CURRENT
10 1 Qrr trr (s)
Feb.1999
600
400
200
0 10 0
2 3 4 5 7 10 1
2 3 4 5 7 10 2
10 0 10 0 7 5 trr 3 Tj=25C 2 Tj=150C 10 -1 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT IF (A)
CONDUCTION TIME (CYCLES AT 60Hz)
REVERSE RECOVERY CHARACTERISTICS (VS. di/dt) (TYPICAL) 10 2 7 VR=300V 5 IF=50A 3 Tj=25C 2 Tj=150C 10 1 7 5 3 2 10 2 Irr
Irr (A), Qrr (C)
Qrr
10 1 trr (s)
10 0 10 0 7 5 trr 3 2 10 -1 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 di/dt (A/s)

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